Our system delivers run to run wafer carriers with identical, truly clean, surface condition

Aesin Ltd. has developed a process tool intended to clean susceptors, satellites, etc. from MOCVD systems used for the deposition of AlN, GaN, InN, etc. to manufacture LED’s or other devices.

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Our System

It uses a chemical process to convert metal nitrides into volatile compounds, they are liberated from the sample, and removed from the reactor. Processing takes place in the gas phase at temperatures < 900 °C. Currently, the system can accommodate a susceptor of up to 465 mm diameter.

In addition, the gas phase thermal cleaning chemistry can be used to carry out etching of GaN, AlGaN, InGaN films and thus if masks are put on these films then it is possible to generate structures.

There are several potential applications from device structures to new porous membrane preparation that could be supported using Aesin’s technology.

Facility Requirements
Environment Clean, vibration free
Power Supply 230V AC, 50-60Hz, 1 phase; 400V AC, 32A, 3 phase
CDA 3 bar
Nitrogen 3 bar
Forming Gas (5%H2/N2) 3 bar
Footprint (LxWxH) 1942 x 1000 x 2136mm
Weight 800kg
Cooling 15L/min @ 17-23°C, inlet pressure of 3 bar
Extraction 250mm duct; 500m3/hr
Exhaust Connected to a suitable scrubber, KF25 fitting
Pneumatic Supply 8 bar max – CDA or N2

Chemical analysis of GaN materials grown using susceptor cleaned using ReClean system

SIMS analysis of AlGaN/GaN HEMT structure grown on an MOCVD system using cleaned susceptor demonstrating no memory effect from cleaning process.