Our System
It uses a chemical process to convert metal nitrides into volatile compounds, they are liberated from the sample, and removed from the reactor. Processing takes place in the gas phase at temperatures < 900 °C. Currently, the system can accommodate a susceptor of up to 465 mm diameter.
In addition, the gas phase thermal cleaning chemistry can be used to carry out etching of GaN, AlGaN, InGaN films and thus if masks are put on these films then it is possible to generate structures.
There are several potential applications from device structures to new porous membrane preparation that could be supported using Aesin’s technology.
| Facility Requirements | |
|---|---|
| Environment | Clean, vibration free |
| Power Supply | 230V AC, 50-60Hz, 1 phase; 400V AC, 32A, 3 phase |
| CDA | 3 bar |
| Nitrogen | 3 bar |
| Forming Gas (5%H2/N2) | 3 bar |
| Footprint (LxWxH) | 1942 x 1000 x 2136mm |
| Weight | 800kg |
| Cooling | 15L/min @ 17-23°C, inlet pressure of 3 bar |
| Extraction | 250mm duct; 500m3/hr |
| Exhaust | Connected to a suitable scrubber, KF25 fitting |
| Pneumatic Supply | 8 bar max – CDA or N2 |
Chemical analysis of GaN materials grown using susceptor cleaned using ReClean system
SIMS analysis of AlGaN/GaN HEMT structure grown on an MOCVD system using cleaned susceptor demonstrating no memory effect from cleaning process.
